Fracture toughness and critical thickness of β-(InxGa1−x)2O3/Ga2O3 by first principles

Author:

Cao Jiahe1ORCID,Xie Zhigao1,Wang Yan1ORCID,Song Hanzhao1,Zeng Guosong2,Tang Weihua3,Tan Chee-Keong1456ORCID

Affiliation:

1. Advanced Materials Thrust, Function Hub, Hong Kong University of Science and Technology (Guangzhou), Nansha, Guangzhou 511466, China

2. Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China

3. Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

4. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China

5. Guangzhou Municipal Key Laboratory of Materials Informatics, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou, Guangdong 511453, China

6. Guangzhou Municipal Key Laboratory of Integrated Circuits Design, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou, Guangdong 511453, China

Abstract

The critical thickness of monoclinic (InxGa1−x)2O3 epitaxial film with In concentration up to 37.5% on β-Ga2O3 substrate along [100], [010] and [001] orientations was explored.

Funder

Guangzhou Municipal Science and Technology Project

Hong Kong University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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