A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability
Author:
Affiliation:
1. Department of Electrical Engineering
2. National Central University
3. Taoyuan, Taiwan
Abstract
NiCo (10 at.% of Co) alloy was employed in the formation of metal silicide and germanosilicide as the contact layer which can be used as future complementary metal–oxide–semiconductor source/drain contact.
Funder
National Science Council Taiwan
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE01465K
Reference16 articles.
1. Study of Through-Silicon-Via Impact on the 3-D Stacked IC Layout
2. Fully Depleted Strained Silicon-on-Insulator p-MOSFETs With Recessed and Embedded Silicon–Germanium Source/Drain
3. Study of High-$k$/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept
4. Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering
5. Novel Approach to Reduce Source/Drain Series and Contact Resistance in High-Performance UTSOI CMOS Devices Using Selective Electrodeless CoWP or CoB Process
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1. Dielectric Confined Nickel-Titanium Germano-Silicide Junctions to SiGe Nanochannels;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22
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