Graphitic carbon nitride nanosheets for solution processed non-volatile memory devices-Reference-Cited by-同舟云学术

Graphitic carbon nitride nanosheets for solution processed non-volatile memory devices

Published:2019 Issue:33 Volume:7 Page:10203-10210
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Ruopeng¹²³⁴,Li Huilin¹²³⁴,Zhang Luhong⁵⁶⁷²³,Zeng Yu-Jia⁵⁶⁷²³^ORCID,Lv Ziyu¹²³⁴,Yang Jia-Qin¹²³⁴,Mao Jing-Yu⁸²⁴,Wang Zhanpeng⁸²⁴,Zhou Ye⁸²⁴^ORCID,Han Su-Ting¹²³⁴^ORCID

Affiliation:

1. Institute of Microscale Optoelectronics

2. Shenzhen University

3. Shenzhen

4. P. R. China

5. Shenzhen Key Laboratory of Laser Engineering

6. Key Laboratory of Optoelectronic Devices and System of Ministry of Education and Guangdong Province

7. College of Optoelectronic Engineering

8. Institute for Advanced Study

Abstract

A memory device is demonstrated based on g-C₃N₄ nanosheets with a non-volatile behavior and a bipolar switching characteristic.

Funder

National Natural Science Foundation of China

Guangdong Science and Technology Department

Shenzhen Science and Technology Innovation Commission

Shenzhen Peacock Plan

National Taipei University of Technology

Shenzhen University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02841B

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