Control of 4H polytype of SiC crystals by moving up the crucible to adjust the temperature field of the growth interface-Reference-Cited by-同舟云学术

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Control of 4H polytype of SiC crystals by moving up the crucible to adjust the temperature field of the growth interface

Published:2019 Issue:45 Volume:21 Page:6964-6968
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Gao Pan¹²³⁴^ORCID,Xin Jun¹²³⁴,Liu Xuechao¹²³⁴,Zheng Yanqing¹²³⁴,Shi Erwei¹²³⁴

Affiliation:

1. Shanghai Institute of Ceramics

2. The Chinese Academy of Sciences

3. Shanghai

4. China

Abstract

It is difficult to control the 4H polytype in the growth of SiC single crystals by the PVT method.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE01363F

Reference19 articles.

1. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

2. S. Das , L. D.Marlino and K. O.Armstrong , U.S. Department of Energy , Office of Scientific and Technical Information , 2018 , ORNL/TM-2017/702, 10.2172/1415915

3. Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth

4. Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction

5. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

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1. Three-Dimensional (3D) Nondestructive Characterization of the Spatial Distribution and Complex Properties of Polytypes on 4H-SiC Wafers;ACS Applied Electronic Materials;2024-09-12

2. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

3. Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis;Materials;2024-02-22

4. Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method;Crystals;2024-01-25

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