Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control-Reference-Cited by-同舟云学术

Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control

Published:2019 Issue:44 Volume:11 Page:21068-21073
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yang Yajie¹²³⁴,Jang Sung Kyu¹²³⁴,Choi Haeju¹²³⁴,Xu Jiao⁵⁶⁷⁸,Lee Sungjoo¹²³⁴⁹^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT)

2. Sungkyunkwan University (SSKU)

3. Suwon 440-746

4. Korea

5. School of Microelectronics

6. Dalian University of Technology

7. Dalian

8. China

9. Department of Nano Engineering

Abstract

Exploiting the layer-dependent semiconductor-to-semimetal transition property, a PtSe₂ device with homogeneous coplanar structure demonstrate high mobility and extremely low contact resistance.

Funder

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR07995E

Reference27 articles.

1. Electrical contacts to two-dimensional semiconductors

2. A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2 –Metal Junction

3. Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide

4. Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

5. High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

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