A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices-Reference-Cited by-同舟云学术

A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

Published:2015 Issue:10 Volume:3 Page:2366-2370
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Ji Hoon¹²³⁴,Kurra Narendra¹²³⁴,AlMadhoun M. N.⁵⁶³⁴,Odeh Ihab N.⁵⁶³⁴,Alshareef H. N.¹²³⁴

Affiliation:

1. Materials Science & Engineering

2. King Abdullah University of Science and Technology (KAUST)

3. Thuwal 23955-6900

4. Saudi Arabia

5. Corporate Research and Innovation Center

6. Saudi Basic Industries Corporation (SABIC)

Abstract

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02079K

Reference26 articles.

1. High-performance solution-processed polymer ferroelectric field-effect transistors

2. High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes

3. A nonvolatile memory element based on an organic field-effect transistor

4. Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes

5. Organic non-volatile memories from ferroelectric phase-separated blends

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