Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite-Reference-Cited by-同舟云学术

Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

Published:2017 Issue:83 Volume:7 Page:52517-52523
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Li Jun¹²³⁴⁵,Huang Chuan-Xin¹²³⁴,Zhang Jian-Hua⁵⁶²⁷⁴^ORCID

Affiliation:

1. School of Material Science and Engineering

2. Shanghai University

3. Shanghai 201800

4. People's Republic of China

5. Key Laboratory of Advanced Display and System Applications

6. Ministry of Education

7. Shanghai 200072

Abstract

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrO_x insulators are fabricated and characterized.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA10448K

Reference53 articles.

1. Fully Printed and Encapsulated SWCNT-Based Thin Film Transistors via a Combination of R2R Gravure and Inkjet Printing

2. Scaling carbon nanotube complementary transistors to 5-nm gate lengths

3. Improving Contact Interfaces in Fully Printed Carbon Nanotube Thin-Film Transistors

4. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

5. Synthesis of metal (Fe or Pd)/alloy (Fe–Pd)-nanoparticles-embedded multiwall carbon nanotube/sulfonated polyaniline composites by γ irradiation

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