Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
Author:
Affiliation:
1. Department of Applied Physics
2. University of Technology Eindhoven
3. Eindhoven
4. The Netherlands
5. Philips Innovation Labs
6. Solliance
Abstract
Application of an external rf substrate bias during the H2 plasma half cycle leads to a significant decrease in film resistivity resulting from a major reduction of O content and an increase in the Hf3+ oxidation state fraction in HfNx thin films
Funder
Stichting voor de Technische Wetenschappen
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC05961B
Reference49 articles.
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2. Copper interconnections and reliability
3. ?Characteristics of HfN Films Deposited by Remote Plasma-enhanced Atomic Layer Deposition
4. Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
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