Synthesis and characterization of Cu2ZnSnS4 thin films by the sulfurization of co-electrodeposited Cu–Zn–Sn–S precursor layers for solar cell applications-Reference-Cited by-同舟云学术

Synthesis and characterization of Cu2ZnSnS4 thin films by the sulfurization of co-electrodeposited Cu–Zn–Sn–S precursor layers for solar cell applications

Published:2014 Issue:46 Volume:4 Page:23977-23984
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Tao Jiahua¹²³⁴⁵,Liu Junfeng¹²³⁴⁵,He Jun¹²³⁴⁵,Zhang Kezhi¹²³⁴⁵,Jiang Jinchun⁶⁷,Sun Lin¹²³⁴⁵,Yang Pingxiong¹²³⁴⁵,Chu Junhao¹²³⁴⁵

Affiliation:

1. Key Laboratory of Polar Materials and Devices

2. Ministry of Education

3. Department of Electronic Engineering

4. East China Normal University

5. Shanghai 200241, China

6. Shanghai Center for Photovoltaics

7. Shanghai 201201, China

Abstract

Cu₂ZnSnS₄ (CZTS) absorbers have been successfully deposited on tin-doped indium oxide coated glass (ITO/glass) substrates by sulfurization process of co-electrodeposited Cu–Zn–Sn–S precursor thin films at various annealing temperatures ranging from 500 to 580 °C for 30 min in an atmosphere of Ar–H₂S (6.5%).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA02327G

Reference38 articles.

1. Preparation of Cu2ZnSnS4 thin films by sulfurizing electroplated precursors

2. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

3. Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films

4. Thermally evaporated Cu2ZnSnS4 solar cells

5. On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact

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