Thermal robustness of magnetic tunnel junctions with perpendicular shape anisotropy-Reference-Cited by-同舟云学术

Thermal robustness of magnetic tunnel junctions with perpendicular shape anisotropy

Published:2020 Issue:11 Volume:12 Page:6378-6384
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lequeux S.¹²³⁴⁵^ORCID,Perrissin N.¹²³⁴⁵,Grégoire G.¹²³⁴⁵,Tillie L.¹²³⁴⁵,Chavent A.⁶⁷⁸⁹,Strelkov N.¹²³⁴⁵,Vila L.¹²³⁴⁵,Buda-Prejbeanu L. D.¹²³⁴⁵,Auffret S.¹²³⁴⁵,Sousa R. C.¹²³⁴⁵,Prejbeanu I. L.¹²³⁴⁵,Di Russo E.¹²¹⁰¹¹¹²,Gautier E.¹²¹⁰¹¹¹²,Conlan A. P.¹²¹⁰¹¹¹²^ORCID,Cooper D.¹²¹⁰¹¹¹²,Dieny B.¹²³⁴⁵^ORCID

Affiliation:

1. Univ. Grenoble Alpes

2. CEA

3. CNRS

4. Grenoble INP

5. INAC-SPINTEC

6. Department of Physics

7. Lomonosov Moscow State University

8. Moscow 119991

9. Russia

10. LETI

11. 38000 Grenoble

12. France

Abstract

Perpendicular Shape Anisotropy based storage layer offers a bulk anisotropy much more robust against thermal fluctuations than the interfacial anisotropy, allowing to reduce the temperature dependence of the coercivity of sub-20 nm MTJ cells.

Funder

European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR10366J

Reference31 articles.

1. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

2. Current-induced magnetization reversal in nanopillars with perpendicular anisotropy

3. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory