Polyamorphism in K2Sb8Se13 for multi-level phase-change memory-Reference-Cited by-同舟云学术

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Polyamorphism in K2Sb8Se13 for multi-level phase-change memory

Published:2020 Issue:19 Volume:8 Page:6364-6369
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xu Meng¹²³⁴⁵^ORCID,Qiao Chong¹²³⁴⁵^ORCID,Xue Kan-Hao¹²³⁴⁵^ORCID,Tong Hao¹²³⁴⁵,Cheng Xiaomin¹²³⁴⁵,Wang Songyou⁶⁷⁸⁵^ORCID,Wang Cai-Zhuang⁹¹⁰¹¹¹²¹³^ORCID,Ho Kai-Ming⁹¹⁰¹¹¹²¹³,Xu Ming¹²³⁴⁵^ORCID,Miao Xiangshui¹²³⁴⁵^ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics

2. School of Optical and Electronic Information

3. Huazhong University of Science and Technology

4. Wuhan 430074

5. China

6. Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering

7. Fudan University

8. Shanghai, 200433

9. Ames Laboratory

10. U. S. Department of Energy and Department of Physics and Astronomy

11. Iowa State University

12. Ames

13. USA

Abstract

A novel phase-change material K₂Sb₈Se₁₃ with two amorphous phases was thoroughly investigated for multi-state data storage.

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01089H

Reference56 articles.

1. Understanding the phase-change mechanism of rewritable optical media

2. Phase-change heterostructure enables ultralow noise and drift for memory operation

3. Design Rules for Phase-Change Materials in Data Storage Applications

4. Projected phase-change memory devices

5. Monatomic phase change memory

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