The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions-Reference-Cited by-同舟云学术

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The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions

Published:2016 Issue:46 Volume:4 Page:10962-10966
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

An Yipeng¹²³⁴,Zhang Mengjun¹²³⁴,Wu Dapeng⁵²³⁴,Fu Zhaoming¹²³⁴⁶,Wang Kun⁷⁸⁹¹⁰^ORCID

Affiliation:

1. College of Physics and Materials Science

2. Henan Normal University

3. Xinxiang 453007

4. China

5. School of Chemistry and Chemical Engineering

6. Beijing National Laboratory for Condensed Matter Physics

7. Department of Physics and Astronomy & NanoSEC

8. University of Georgia

9. Athens

10. USA

Abstract

All kinds of MoS₂–WS₂ lateral heterojunctions present an interesting negative differential resistive effect.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC04327E

Reference34 articles.

1. Heterostructure bipolar transistors and integrated circuits

2. Electrical spin injection in a ferromagnetic semiconductor heterostructure

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Boron nitride substrates for high-quality graphene electronics

5. Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers

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