How to repair the performance degradation of WSeTe SBFET caused by channel vacancy defects: A first principles study-Reference-Cited by-同舟云学术

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How to repair the performance degradation of WSeTe SBFET caused by channel vacancy defects: A first principles study

Published:2024-04 Issue: Volume:3 Page:100179
ISSN:2949-8228
Container-title:Next Materials
language:en
Short-container-title:Next Materials

Author:

Dou Liuming^ORCID,Fan Zhiqiang,Deng Xiaoqing,Sun Lin

Publisher

Elsevier BV

Reference30 articles.

1. First principle study of doped graphene for FET applications;Narendar;Silicon,2019

2. Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors;Quhe;Phys. Rev. Appl.,2018

3. Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions;Li;Nanoscale,2013

4. Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides;Jiang;Appl. Phys. Lett.,2014

5. Spin filtering effect and magnetoresistance in zigzag 6, 6, 12-graphyne nanoribbon system;Zhou;Carbon,2014

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