Surface potentials of acceptor- and donor-doped CeO2 thin films and their relation to oxygen surface exchange-Reference-Cited by-同舟云学术

Surface potentials of acceptor- and donor-doped CeO2 thin films and their relation to oxygen surface exchange

Published:2022 Issue:2 Volume:24 Page:1072-1080
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Wardenga Hans F.¹,Schuldt Katharina N. S.¹,Waldow Stephan²,De Souza Roger A.²^ORCID,Klein Andreas¹^ORCID

Affiliation:

1. Technische Universität Darmstadt, Dept. of Materials and Earth Sciences, Electronic Structure of Materials, Otto-Berndt-Str. 3, 64287 Darmstadt, Germany

2. RWTH Aachen University, Institute of Physical Chemistry, Landoltstraße 2, 52056 Aachen, Germany

Abstract

Fermi level positions, ionisation potentials, and work functions of acceptor-, donor-, and undoped CeO2 have been determined by means of in situ photoelectron spectroscopy on films grown with different surface orientation and preparation conditions.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP03776E

Reference50 articles.

1. Structural and Oxygen Storage/Release Properties of CeO2-Based Solid Solutions

2. Appraisal of Ce1−yGdyO2−y/2 electrolytes for IT-SOFC operation at 500°C

3. Physical, chemical and electrochemical properties of pure and doped ceria