Bi3+ acting both as an electron and as a hole trap in La-, Y-, and LuPO4-Reference-Cited by-同舟云学术

Bi3+ acting both as an electron and as a hole trap in La-, Y-, and LuPO4

Published:2018 Issue:23 Volume:6 Page:6240-6249
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lyu Tianshuai¹²³⁴⁵^ORCID,Dorenbos Pieter¹²³⁴⁵^ORCID

Affiliation:

1. Delft University of Technology

2. Faculty of Applied Sciences

3. Department of Radiation Science and Technology

4. Section Luminescence Materials

5. 2629JB Delft

Abstract

The vacuum referred binding energy (VRBE)-guided design of Bi³⁺-based storage and afterglow materials together with charge carrier trapping processes is explored with a study on bismuth- and lanthanide-doped rare earth ortho-phosphates.

Funder

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC01020J

Reference62 articles.

1. Persistent Luminescence in Non-Eu2+-Doped Compounds: A Review

2. Charge carrier trapping processes in lanthanide doped LaPO4, GdPO4, YPO4, and LuPO4

3. Long persistent phosphors—from fundamentals to applications

4. Charge Carrier Trapping Processes in RE2O2S (RE = La, Gd, Y, and Lu)

5. A New Long Phosphorescent Phosphor with High Brightness, SrAl2 O 4 : Eu2 + , Dy3 +

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