Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres-Reference-Cited by-同舟云学术

Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

Published:2018 Issue:44 Volume:6 Page:12079-12085
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Regoutz Anna¹²³⁴^ORCID,Pobegen Gregor⁵⁶⁷,Aichinger Thomas⁸⁹⁷

Affiliation:

1. Imperial College London

2. Department of Materials

3. London SW7 2AZ

4. UK

5. Kompetenzzentrum für Automobil- und Industrieelektronik GmbH

6. 9524 Villach-St. Magdalen

7. Austria

8. Infineon Technologies Austria AG

9. 9500 Villach

Abstract

SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO₂ interface after high temperature nitridation treatments in a variety of atmospheres.

Funder

Österreichische Forschungsförderungsgesellschaft

Imperial College London

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02935K

Reference24 articles.

1. Silicon carbide high-power devices

2. Material science and device physics in SiC technology for high-voltage power devices