Solution-processed amorphous yttrium aluminium oxide YAlxOy and aluminum oxide AlxOy, and their functional dielectric properties and performance in thin-film transistors-Reference-Cited by-同舟云学术

Solution-processed amorphous yttrium aluminium oxide YAlxOy and aluminum oxide AlxOy, and their functional dielectric properties and performance in thin-film transistors

Published:2020 Issue:25 Volume:8 Page:8521-8530
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Koslowski Nico¹²³⁴⁵^ORCID,Trouillet Vanessa⁶⁷⁸⁵,Schneider Jörg J.¹²³⁴⁵^ORCID

Affiliation:

1. Fachbereich Chemie

2. Eduard-Zintl-Institut für Anorganische und Physikalische Chemie

3. Technische Universität Darmstadt

4. 64287 Darmstadt

5. Germany

6. Institute for Applied Materials (IAM-ESS) and Karlsruhe Nano Micro Facility (KNMF)

7. Karlsruhe Institute of Technology (KIT)

8. 76344 Eggenstein-Leopoldshafen

Abstract

Yttrium aluminium oxide (YAl_xO_y) dielectric is accessible using a molecular single-source precursor approach. Processing using deep UV leads to a functional amorphous dielectric with functionality in a thin-film transistor device.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01876G

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4. Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors

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