Point defect detection and strain mapping in Si single crystal by two-dimensional multiplication moiré method-Reference-Cited by-同舟云学术

Point defect detection and strain mapping in Si single crystal by two-dimensional multiplication moiré method

Published:2021 Issue:40 Volume:13 Page:16900-16908
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Qinghua¹^ORCID,Ri Shien¹^ORCID,Xia Peng¹^ORCID,Ye Jiaxing¹^ORCID,Toyama Nobuyuki¹^ORCID

Affiliation:

1. Research Institute for Measurement and Analytical Instrumentation, National Metrology Institute of Japan (NMIJ), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan

Abstract

A two-dimensional multiplication moiré method was developed to detect point and line defects of crystals in a wide field of view.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR04054E

Reference33 articles.

1. Point defect engineering in thin-film solar cells

2. Point defect diffusion in Si and SiGe revisited through atomistic simulations

3. Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

4. Point defect of titanium sesquioxide Ti2O3 as the application of next generation Li-ion batteries

5. A computational framework for automation of point defect calculations

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