Point defect detection and strain mapping in Si single crystal by two-dimensional multiplication moiré method
Author:
Affiliation:
1. Research Institute for Measurement and Analytical Instrumentation, National Metrology Institute of Japan (NMIJ), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
Abstract
Funder
Japan Society for the Promotion of Science
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR04054E
Reference33 articles.
1. Point defect engineering in thin-film solar cells
2. Point defect diffusion in Si and SiGe revisited through atomistic simulations
3. Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control
4. Point defect of titanium sesquioxide Ti2O3 as the application of next generation Li-ion batteries
5. A computational framework for automation of point defect calculations
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