Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control-Reference-Cited by-同舟云学术

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

Published:2019-06-05 Issue:7 Volume:19 Page:4371-4379
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Edelberg Drew,Rhodes Daniel,Kerelsky Alexander,Kim Bumho,Wang Jue^ORCID,Zangiabadi Amirali¹,Kim Chanul¹,Abhinandan Antony,Ardelean Jenny,Scully Micheal²,Scullion Declan²,Embon Lior,Zu Rui¹,Santos Elton J. G.²,Balicas Luis¹³^ORCID,Marianetti Chris⁴,Barmak Katayun,Zhu Xiaoyang^ORCID,Hone James,Pasupathy Abhay N.^ORCID

Affiliation:

1. National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States

2. School of Mathematics and Physics, Queen’s University, Belfast, BT7 1NN, United Kingdom

3. Department of Physics, Florida State University, Tallahassee, Florida 32306, United States

4. Department of Applied Physics and Applied Math, Columbia University, New York, New York 10027, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b00985

Reference65 articles.

1. Optical Control of Spin Polarization in Monolayer Transition Metal Dichalcogenides

2. Electrical control of the valley Hall effect in bilayer MoS2 transistors

3. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

4. Spin and pseudospins in layered transition metal dichalcogenides

5. High-temperature superfluidity with indirect excitons in van der Waals heterostructures

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