Enhanced electrical properties of antimony doped tin oxide thin films deposited via aerosol assisted chemical vapour deposition
Author:
Affiliation:
1. Materials Chemistry Centre
2. Department of Chemistry
3. University College London
4. London WC1H 0AJ
5. UK
Abstract
A scalable CVD route to SnO2 : Sb thin films that show resistivity as low as 4.7 × 10−4 Ω cm and a corresponding sheet resistance of 9 Ω sq−1. Theoritical insight into the defect chemistry is provided by ab initio hybrid density functional theory.
Funder
Engineering and Physical Sciences Research Council
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC01929K
Reference67 articles.
1. Bandgap narrowing in high dopant tin oxide degenerate thin film produced by atmosphere pressure chemical vapor deposition
2. Synthesis and characterization of antimony-doped tin oxide (ATO) nanoparticles with high conductivity using a facile ammonia-diffusion co-precipitation method
3. Origin of High Mobility in Molybdenum-Doped Indium Oxide
4. Properties of (200) oriented, highly conductive SnO2 thin films by chemical spray pyrolysis from non-aqueous medium: Effect of antimony doping
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