Origin of High Mobility in Molybdenum-Doped Indium Oxide-Reference-Cited by-同舟云学术

Origin of High Mobility in Molybdenum-Doped Indium Oxide

Published:2015-04-14 Issue:8 Volume:27 Page:2788-2796
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Bhachu Davinder S.,Scanlon David O.¹,Sankar Gopinathan,Veal T. D.²,Egdell Russell G.³,Cibin Giannantonio¹,Dent Andrew J.¹,Knapp Caroline E.,Carmalt Claire J.,Parkin Ivan P.

Affiliation:

1. Diamond Light Source, Harwell Science and Innovation Campus, Diamond House, Didcot, Oxfordshire OX11 0DE, United Kingdom

2. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF, United Kingdom

3. Chemistry Research Laboratory, Mansfield Road, Oxford OX1 3TA, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm503896h

Reference67 articles.

1. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows

2. Highly conductive and transparent films of tin and fluorine doped indium oxide produced by APCVD