Solution processing of highly conductive ruthenium and ruthenium oxide thin films from ruthenium

Solution processing of highly conductive ruthenium and ruthenium oxide thin films from ruthenium–amine complexes

Published:2015 Issue:17 Volume:3 Page:4490-4499
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Murakami Yoshitaka¹²³⁴⁵,Li Jinwang¹²³⁴⁶,Hirose Daisuke¹²³⁴⁶,Kohara Shinji⁷⁸⁴⁹²,Shimoda Tatsuya¹²³⁴⁶

Affiliation:

1. Green Devices Research Center

2. Japan Advanced Institute of Science and Technology (JAIST)

3. Nomi

4. Japan

5. JSR Corporation

6. Japan Science and Technology Agency (JST)

7. SPring-8/Japan Synchrotron Radiation Research Institute (JASRI)

8. Sayo-gun

9. School of Materials Science

Abstract

Designing of ruthenium–amine complexes leads to preparation of highly conductive thin films of ruthenium (20–40 nm thick) and ruthenium oxide (50–90 nm thick) by a simple solution process.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00675A

Reference27 articles.

1. Size Dependent Effects in Nucleation of Ru and Ru Oxide Thin Films by Atomic Layer Deposition Measured by Synchrotron Radiation X-ray Diffraction

2. Properties of Ru and RuO2Thin Films Prepared by Metalorganic Chemical Vapor Deposition

3. Atomic layer deposition of Ru thin film using N2/H2 plasma as a reactant

4. X-ray photoelectron spectroscopy and micro-Raman analysis of conductive RuO2 thin films

5. Surface Chemistry of Ruthenium Dioxide in Heterogeneous Catalysis and Electrocatalysis: From Fundamental to Applied Research

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