Substitutional doped GeSe: tunable oxidative states with strain engineering
Author:
Affiliation:
1. Center for Data Science
2. Institute of Collaborative Innovation
3. University of Macau
4. Taipa
5. China
6. Joint Key Laboratory of the Ministry of Education
7. Institute of Applied Physics and Materials Engineering
Abstract
Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting. The work shows dynamic oxidative states of the dopants under strain in GeSe, an emerging 2D chalcogenide with potential nanoelectronics applications.
Funder
Universidade de Macau
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC03272G
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