Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates-Reference-Cited by-同舟云学术

Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates

Published:2014 Issue:24 Volume:16 Page:5430-5436
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chubarov M.¹²³,Pedersen H.¹²³,Högberg H.¹²³,Czigany Zs.⁴⁵⁶,Henry A.¹²³

Affiliation:

1. Linköping University

2. Department of Physics Chemistry and Biology

3. SE-581 83 Linköping, Sweden

4. Institute of Technical Physics and Materials Science

5. Research Centre for Natural Sciences of Hungarian Academy of Sciences

6. Budapest, Hungary

Abstract

Epitaxial growth of rhombohedral boron nitride (r-BN) on different polytypes of silicon carbide (SiC) is demonstrated using thermally activated hot-wall chemical vapour deposition and triethyl boron and ammonia as precursors.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE00381K

Reference28 articles.

1. Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE

2. Fabrication of boron nitride planar field emitters

3. Crystallinity improvement of hexagonal boron nitride films by molybdenum catalysts during microwave plasma chemical vapor deposition and post-annealing

4. Thin film growth of boron nitride on α-Al2O3 (001) substrates by reactive sputtering

5. Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

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