Toward tunable doping in graphene FETs by molecular self-assembled monolayers-Reference-Cited by-同舟云学术

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Toward tunable doping in graphene FETs by molecular self-assembled monolayers

Published:2013 Issue:20 Volume:5 Page:9640
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Bing,Klekachev Alexander V.,Cantoro Mirco,Huyghebaert Cedric,Stesmans André,Asselberghs Inge,De Gendt Stefan,De Feyter Steven

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2013/NR/C3NR01255G

Reference34 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene: Status and Prospects

3. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

4. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

5. All-Carbon Electronic Devices Fabricated by Directly Grown Single-Walled Carbon Nanotubes on Reduced Graphene Oxide Electrodes

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3. Tuning the morphological and electrical properties of graphite surface by self-assembled viologen nanostructures;Surface Science;2022-09

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