Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors
Author:
Affiliation:
1. Division of Advanced Materials
2. Korea Research Institute of Chemical Technology
3. Daejeon 305-600, Republic of Korea
4. Department of Polymer Science and Engineering
5. Chungnam National University
6. Daejeon 305-764, Republic of Korea
Abstract
We have developed poly(imide-benzoxazole) gate insulators with high thermal resistance. The 350 °C-annealed indium-zinc oxide/poly(imide-benzoxazole) thin-film transistors showed excellent performance.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00709C
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