Two-dimensional large-scale bandgap-tunable monolayer MoS2(1−x)Se2x/graphene heterostructures for phototransistors-Reference-Cited by-同舟云学术

Two-dimensional large-scale bandgap-tunable monolayer MoS2(1−x)Se2x/graphene heterostructures for phototransistors

Published:2017 Issue:24 Volume:5 Page:5887-5896
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yue Yuchen¹²³⁴⁵,Feng Yiyu¹²³⁴⁶,Chen Jiancui⁷⁸²³⁴,Zhang Daihua⁷⁸²³⁴,Feng Wei¹²³⁴⁵^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. Tianjin University

3. Tianjin 300072

4. P. R. China

5. Tianjin Key Laboratory of Composite and Functional Materials

6. Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)

7. College of Precision Instrument and Optoelectronics Engineering

8. State Key Laboratory of Precision Measuring Technology & Instruments

Abstract

The centimeter-scale and high-quality bandgap-tunable monolayer MoS_2(1−x)Se_2x films are prepared on graphene by one-step direct synthesis, and the phototransistors of MoS_2(1−x)Se_2x/graphene heterostructures exhibit high responsivity and good cycling performance.

Funder

Natural Science Foundation of Tianjin City

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00951H

Reference62 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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