Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications-Reference-Cited by-同舟云学术

Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications

Published:2020 Issue:24 Volume:12 Page:13103-13112
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Dippel Ann-Christin¹²³^ORCID,Gutowski Olof¹²³,Klemeyer Lars⁴⁵⁶⁷³^ORCID,Boettger Ulrich⁸⁹¹⁰³,Berg Fenja⁸⁹¹⁰³,Schneller Theodor⁸⁹¹⁰³,Hardtdegen Alexander¹¹¹²¹³³^ORCID,Aussen Stephan¹¹¹²¹³³^ORCID,Hoffmann-Eifert Susanne¹¹¹²¹³³,Zimmermann Martin v.¹²³

Affiliation:

1. Deutsches Elektronen-Synchrotron DESY

2. 22607 Hamburg

3. Germany

4. Center for Hybrid Nanostructures (CHyN)

5. Institute of Nanostructure and Solid State Physics

6. University of Hamburg

7. 22761 Hamburg

8. Institute for Materials in Electrical Engineering (IWE2)

9. and Jülich Aachen Research Alliance for Future Information Technology (JARA-FIT)

10. 52074 Aachen

11. Peter Grünberg Institute (PGI 7 & 10) and Jülich Aachen Research Alliance for Future Information Technology (JARA-FIT)

12. Forschungszentrum Jülich GmbH

13. 52425 Jülich

Abstract

The local atomic structure of two stacked thin films is probed by applying grazing incidence x-ray total scattering at variable incidence angle and resolving pair distribution functions for each individual layer.

Funder

Helmholtz Association

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR01847C

Reference47 articles.

1. K. Seshan and D.Schepis , Handbook of Thin-Film Deposition , William Andrew Publishing, Elsevier Inc. , Oxford (United Kingdom), Cambridge (Massachusetts, USA) , 4th edn, 2018

2. Stochastic Memory Devices for Security and Computing

3. Redox-based memristive devices for new computing paradigm

4. Newly developed process integration technologies for highly reliable 40 nm ReRAM

5. Resistive switching materials for information processing

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