Newly developed process integration technologies for highly reliable 40 nm ReRAM-Reference-Cited by-同舟云学术

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Newly developed process integration technologies for highly reliable 40 nm ReRAM

Published:2019-02-22 Issue:SB Volume:58 Page:SBBB06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoneda Shinichi,Ito Satoru,Hayakawa Yukio,Wei Zhiqiang,Muraoka Shunsaku,Yasuhara Ryutaro,Kawashima Koichi,Himeno Atsushi,Mikawa Takumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SB/a=SBBB06/pdf

Reference29 articles.

1. High switching endurance in TaOx memristive devices

2. High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An ultra high-endurance memristor using back-end-of-line amorphous SiC;Scientific Reports;2024-06-18

2. It's Getting Hot in Here: Hardware Security Implications of Thermal Crosstalk on ReRAMs;IEEE Transactions on Reliability;2024

3. Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory;Advanced Electronic Materials;2021-11-02

4. ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory;IEEE Access;2021

5. Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications;Nanoscale;2020

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