Micro-Raman and electronic structure study on kinetics of electronic excitations induced monoclinic-to-tetragonal phase transition in zirconium oxide films-Reference-Cited by-同舟云学术

Micro-Raman and electronic structure study on kinetics of electronic excitations induced monoclinic-to-tetragonal phase transition in zirconium oxide films

Published:2016 Issue:106 Volume:6 Page:104425-104432
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Rawat Mukesh¹²³⁴,Das Arkaprava⁵⁶⁷⁴,Shukla D. K.⁸⁹⁴,Rajput Parasmani¹⁰¹¹¹²⁴,Chettah A.¹³¹⁴¹⁵¹⁶,Phase D. M.⁸⁹⁴,Ramola R. C.¹²³⁴,Singh Fouran⁵⁶⁷⁴^ORCID

Affiliation:

1. Department of Physics

2. H.N.B.Garhwal University

3. Tehri Garhwal 249199

4. India

5. Materials Science Group

6. Inter University Accelerator Centre

7. New Delhi-110 067

8. UGC-DAE Consortium for Scientific Research

9. Indore 452017

10. Atomic & Molecular Physics Division

11. Bhabha Atomic Research Center

12. Mumbai 400085

13. LGMM Laboratory

14. Université 20 Août 1955-Skikda

15. 21000 Skikda

16. Algeria

Abstract

Monoclinic-to-tetragonal phase transformation (PT) in sputtering grown zirconium oxide (ZrO₂) films on silicon substrates by electronic excitation (EE) induced by swift heavy ion (SHI) irradiation is reported.

Funder

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA14199D

Reference43 articles.

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3. Theoretical Evaluation of Zirconia and Hafnia as Gate Oxides for Si Microelectronics