Bifunctional enhancement of photodetection and photovoltaic parameters in graphene/porous-Si heterostructures by employing interfacial hexagonal boron nitride and bathocuproine back-surface passivation layers-Reference-Cited by-同舟云学术

Bifunctional enhancement of photodetection and photovoltaic parameters in graphene/porous-Si heterostructures by employing interfacial hexagonal boron nitride and bathocuproine back-surface passivation layers

Published:2022 Issue:42 Volume:10 Page:15913-15919
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jang Chan Wook¹,Shin Dong Hee²,Choi Suk-Ho¹^ORCID

Affiliation:

1. Department of Applied Physics, Institute of Natural Sciences, and Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin, 17104, Korea

2. Department of Physics, Andong National University, Andong, Gyeongbuk, 36729, South Korea

Abstract

The schematic band diagram of a typical TFSA-GR/h-BN/PSi/n-Si/BCP PD and temporal changes of the repeated on/off photocurrent switching behaviors for the PDs without h-BN and BCP, with only h-bN, and with both layers.

Funder

National Research Foundation of Korea

Ministry of Science and ICT, South Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC03206F

Reference42 articles.

1. 2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges

2. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

3. Graphene/Semiconductor Hybrid Heterostructures for Optoelectronic Device Applications

4. Record-High Responsivity and Detectivity of a Flexible Deep-Ultraviolet Photodetector Based on Solid State-Assisted Synthesized hBN Nanosheets

5. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices

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2. Self-powered semitransparent WS₂/LaVO₃ vertical-heterostructure photodetectors by employing interfacial hexagonal boron nitride;Nanotechnology;2024-01-24

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