Record-High Responsivity and Detectivity of a Flexible Deep-Ultraviolet Photodetector Based on Solid State-Assisted Synthesized hBN Nanosheets
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Hyderabad, Hyderabad, Telangana 502285, India
2. Department of Physics, National Institute of Technology Kurukshetra, Kurukshetra 136119, India
Funder
Science and Engineering Research Board
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01021
Reference27 articles.
1. Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application
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4. Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X-ray (SX) region (10–100 nm)
5. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors
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