Native defect-assisted enhanced response to CH4 near room temperature by Al0.07Ga0.93N nanowires-Reference-Cited by-同舟云学术

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Native defect-assisted enhanced response to CH4 near room temperature by Al0.07Ga0.93N nanowires

Published:2018 Issue:27 Volume:20 Page:18391-18399
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Parida Santanu¹²³⁴⁵^ORCID,Das A.¹²³⁴⁵,Prasad Arun K.¹²³⁴⁵^ORCID,Ghatak Jay⁶⁷⁸⁹⁵,Dhara Sandip¹²³⁴⁵^ORCID

Affiliation:

1. Surface and Nanoscience Division

2. Indira Gandhi Centre for Atomic Research

3. Homi Bhabha National Institute

4. Kalpakkam-603102

5. India

6. Chemistry and Physics of Materials Unit

7. International Centre for Materials Science

8. Jawaharlal Nehru Centre for Advanced Scientific Research

9. Bangalore-560064

Abstract

Enhanced CH₄ sensing with sufficient sensitivity of 100 ppm at 50 °C is realized for Al_0.07Ga_0.93N nanowires by utilizing native defects.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP02879F

Reference44 articles.

1. Growth and Characterization of Ternary AlGaN Alloy Nanocones across the Entire Composition Range

2. Growth, structural and optical properties of AlGaN nanowires in the whole composition range

3. Fabrication of non-polar GaN based highly responsive and fast UV photodetector

4. Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates

5. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

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