Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

Author:

Wei Huiyun12345ORCID,Wu Jionghua678910,Qiu Peng12345,Liu Sanjie12345,He Yingfeng12345,Peng Mingzeng12345ORCID,Li Dongmei678910,Meng Qingbo678910,Zaera Francisco11121314ORCID,Zheng Xinhe12345

Affiliation:

1. School of Mathematics and Physics

2. Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science

3. University of Science and Technology Beijing

4. Beijing 100083

5. China

6. Key Laboratory for Renewable Energy (CAS)

7. Beijing Key Laboratory for New Energy Materials and Devices

8. Beijing National Laboratory for Condense Matter Physics

9. Institute of Physics

10. Chinese Academy of Science

11. Department of Chemistry and UCR Centre of Catalysis

12. University of California

13. Riverside

14. USA

Abstract

Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.

Funder

China Postdoctoral Science Foundation

Natural Science Foundation of Beijing Municipality

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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