Band offsets in new BN/BX (X = P, As, Sb) lateral heterostructures based on bond-orbital theory-Reference-Cited by-同舟云学术

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Band offsets in new BN/BX (X = P, As, Sb) lateral heterostructures based on bond-orbital theory

Published:2018 Issue:34 Volume:10 Page:15918-15925
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhou Wenhan¹²³⁴⁵^ORCID,Liu Xuhai¹²³⁴⁵,Hu Xuemin¹²³⁴⁵,Zhang Shengli¹²³⁴⁵^ORCID,Zhi Chunyi⁶⁷⁸⁹^ORCID,Cai Bo¹²³⁴⁵,Guo Shiying¹²³⁴⁵,Song Xiufeng¹²³⁴⁵^ORCID,Li Zhi¹²³⁴⁵,Zeng Haibo¹²³⁴⁵^ORCID

Affiliation:

1. MIIT Key Laboratory of Advanced Display Materials and Devices

2. Ministry of Industry and Information Technology

3. Institute of Optoelectronics & Nanomaterials

4. Nanjing University of Science and Technology

5. Nanjing

6. Department of Materials Science and Engineering

7. City University of Hong Kong

8. Kowloon

9. China

Abstract

Identifying heterostructures with tunable band alignments remains a difficult challenge.

Funder

National Natural Science Foundation of China

Research Grants Council, University Grants Committee

Xiamen University of Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR05194A

Reference55 articles.

1. Electrochemical and Photoelectrochemical Investigation of Single-Crystal Anatase

2. Deformation potentials of CdSe quantum dots

3. Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” inn-Type III-V Semiconductors

4. Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

5. Electrical spin injection in a ferromagnetic semiconductor heterostructure

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4. NO2 Adsorption Sensitivity Adjustment of As/Sb Lateral Heterojunctions through Strain: First Principles Calculations;Crystals;2023-08-30

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