Room-temperature spin-valve devices based on Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals heterojunctions-Reference-Cited by-同舟云学术

Room-temperature spin-valve devices based on Fe₃GaTe₂/MoS₂/Fe₃GaTe₂ 2D van der Waals heterojunctions

Published:2023 Issue:11 Volume:15 Page:5371-5378
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Jin Wen¹²,Zhang Gaojie¹²,Wu Hao¹²³⁴,Yang Li¹²,Zhang Wenfeng¹²³^ORCID,Chang Haixin¹²³⁴^ORCID

Affiliation:

1. Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

2. Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen 518000, China

3. Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

4. Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract

A room-temperature spin-valve effect was observed in Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals (vdW) heterojunction devices.

Funder

National Key Research and Development Program of China

Science and Technology Foundation of Shenzhen City

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR06886A

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