Polarity flipping in an isotype heterojunction (p-SnS/p-Si) to enable a broadband wavelength selective energy-efficient photodetector-Reference-Cited by-同舟云学术

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Polarity flipping in an isotype heterojunction (p-SnS/p-Si) to enable a broadband wavelength selective energy-efficient photodetector

Published:2018 Issue:26 Volume:6 Page:6899-6904
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Patel Malkeshkumar¹²³⁴²^ORCID,Kumar Mohit¹²³⁴²,Kim Joondong¹²³⁴²^ORCID

Affiliation:

1. Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University

2. Incheon

3. Republic of Korea

4. Department of Electrical Engineering, Incheon National University

Abstract

We fabricated a p–p isotype heterojunction (SnS/Si), which exhibits selective photodetection at zero-bias.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02188K

Reference32 articles.

1. Filterless narrowband visible photodetectors

2. Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

3. Near infrared photodetectors based on sub-gap absorption in organohalide perovskite single crystals

4. Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors

5. Textured V-Pit Green Light Emitting Diode as a Wavelength-Selective Photodetector for Fast Phosphor-Based White Light Modulation

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