Silicon compatible Sn-based resistive switching memory-Reference-Cited by-同舟云学术

Silicon compatible Sn-based resistive switching memory

Published:2018 Issue:20 Volume:10 Page:9441-9449
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sonde Sushant¹²³⁴⁵^ORCID,Chakrabarti Bhaswar¹²³⁴⁵,Liu Yuzi¹²³⁴,Sasikumar Kiran¹²³⁴,Lin Jianqiang¹²³⁴,Stan Liliana¹²³⁴,Divan Ralu¹²³⁴,Ocola Leonidas E.¹²³⁴,Rosenmann Daniel¹²³⁴,Choudhury Pabitra⁶⁷⁸⁴,Ni Kai⁹¹⁰¹¹⁴,Sankaranarayanan Subramanian K. R. S.¹²³⁴,Datta Suman⁹¹⁰¹¹⁴,Guha Supratik¹²³⁴⁵

Affiliation:

1. Center for Nanoscale Materials

2. Argonne National Laboratory

3. Lemont

4. USA

5. Institute for Molecular Engineering

6. Chemical Engineering and Materials Engineering Department

7. New Mexico Institute of Mining and Technology

8. Socorro

9. Department of Electrical Engineering

10. University of Norte Dame

11. Notre Dame

Abstract

Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.

Funder

U.S. Department of Energy

Microelectronics Advanced Research Corporation

Defense Advanced Research Projects Agency

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR01540F

Reference38 articles.