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Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors

  • Published:2005 Issue:19 Volume:15 Page:1896
  • ISSN:0959-9428
  • Container-title:Journal of Materials Chemistry
  • language:en
  • Short-container-title:J. Mater. Chem.

Author:

Loo Yim Fun,O'Kane Ruairi,Jones Anthony C.,Aspinall Helen C.,Potter Richard J.,Chalker Paul R.,Bickley Jamie F.,Taylor Stephen,Smith Lesley M.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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2. Lanthanide rare earth oxide thin film as an alternative gate oxide;Materials Science in Semiconductor Processing;2017-09

3. Volatile zirconium compounds: Prospects for use in gas-phase isotope separation;Russian Journal of Applied Chemistry;2016-12

4. Effect of excess hafnium on HfO2 crystallization temperature and leakage current behavior of HfO2/Si metal-oxide-semiconductor devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03

5. Homoleptic zirconium amidates: single source precursors for the aerosol-assisted chemical vapour deposition of ZrO2;Journal of Materials Chemistry C;2016
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