Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility-Reference-Cited by-同舟云学术

Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

Published:2020 Issue:9 Volume:22 Page:5163-5169
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zheng Fu-Bao¹²³⁴⁵,Zhang Liang¹²³⁴^ORCID,Zhang Jin¹²³⁴,Wang Pei-ji¹²³⁴^ORCID,Zhang Chang-Wen¹²³⁴

Affiliation:

1. School of Physics and Technology

2. University of Jinan

3. Jinan

4. People's Republic of China

5. National Laboratory of Solid State Microstructures

Abstract

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices.

Funder

Taishan Scholar Project of Shandong Province

Natural Science Foundation of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/C9CP06445A

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5. Discovery of intrinsic quantum anomalous Hall effect in organic Mn-DCA lattice

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