Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods-Reference-Cited by-同舟云学术

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

Published:2015 Issue:2 Volume:3 Page:431-437
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Conroy Michele¹²³⁴⁵,Zubialevich Vitaly Z.¹²³⁴,Li Haoning¹²³⁴⁶,Petkov Nikolay¹²³⁴⁷,Holmes Justin D.¹²³⁴⁵,Parbrook Peter J.¹²³⁴⁶

Affiliation:

1. Tyndall National Institute

2. University College Cork

3. Cork

4. Ireland

5. Materials Chemistry & Analysis Group

6. School of Engineering

7. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN)

Abstract

We report an inexpensive nanoscale patterning process for epitaxial lateral overgrowth (ELOG) in AlN layers grown by metal organic vapour phase epitaxy (MOVPE) on sapphire.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC01536C

Reference32 articles.

1. Some Properties of Aluminum Nitride

2. Epitaxial growth of high quality AlN films on metallic aluminum substrates

3. Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition

4. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

5. Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs

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