UV irradiation induced reversible graphene band gap behaviors-Reference-Cited by-同舟云学术

UV irradiation induced reversible graphene band gap behaviors

Published:2016 Issue:36 Volume:4 Page:8459-8465
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xu Zhemi¹²³⁴,Ao Zhimin⁵⁶⁷⁸⁹,Chu Dewei¹²³⁴,Li Sean¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. The University of New South Wales

3. Sydney

4. Australia

5. Institute of Environmental Health and Pollution Control

6. School of Environmental Science and Engineering

7. Guangdong University of Technology

8. Guangzhou

9. China

Abstract

Both experiments and DFT calculations show UV irradiation can tune the band gap of graphene. Most importantly, such a band gap transition is reversible and can be controlled by the alternative treatment of UV irradiation and dark storage.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03466G

Reference21 articles.

1. Graphene photonics and optoelectronics

2. Bandgap opening in graphene induced by patterned hydrogen adsorption

3. Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

4. Graphene: Electronic and Photonic Properties and Devices

5. Substrate-induced bandgap opening in epitaxial graphene

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