Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition-Reference-Cited by-同舟云学术

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

Author:

Park Chang-Soo¹²³⁴,Zhao Yu⁵⁶⁷⁸,Shon Yoon⁹¹⁰¹¹⁸,Yoon Im Taek⁹¹⁰¹¹⁸,Lee Cheol Jin⁵⁶⁷⁸,Song Jin Dong¹²¹³¹⁴⁸,Lee Haigun¹⁵⁶⁷⁸,Kim Eun Kyu¹²³⁴

Affiliation:

1. Department of Physics and Quantum-Function Research Laboratory

2. Hanyang University

3. Seoul 133-791

4. Korea

5. School of Electrical Engineering

6. Korea University

7. Seoul 136-701

8. Republic of Korea

9. Quantum Functional Semiconductor Research Center

10. Dongguk University

11. Seoul 100-715

12. Center for Spintronics Research

13. Korea Institute of Science and Technology

14. Seoul 136-791

15. Department of Materials Science Engineering

Abstract

We report a ferromagnetic graphene field-effect transistor with a band gap.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference37 articles.

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