High charge carrier storage capacity and wide range X-rays to infrared photon sensing in LiLuGeO4:Bi3+,Ln3+ (Ln = Pr, Tb, or Dy) for anti-counterfeiting and information storage applications
Author:
Affiliation:
1. Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
Abstract
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Huaqiao University
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2023/QM/D2QM01098D
Reference52 articles.
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4. Multilevel optical data storage in a Eu2+/Ho3+ doped Ba2SiO4 phosphor with linear mapping between ultraviolet excitation and a thermoluminescence/photostimulated luminescence response
5. Ionizing-radiation-induced storage-luminescence for dosimetric applications
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