Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor-Reference-Cited by-同舟云学术

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

Published:2019 Issue:33 Volume:7 Page:10231-10239
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chikoidze Ekaterine¹²³⁴⁵^ORCID,Sartel Corinne¹²³⁴⁵,Mohamed Hagar¹²³⁴⁵,Madaci Ismail¹²³⁴⁵,Tchelidze Tamar⁶⁷⁸⁹¹⁰,Modreanu Mircea¹¹¹²¹³¹⁴,Vales-Castro Pablo¹⁵¹⁶¹⁷¹⁸¹⁹,Rubio Carles¹⁵¹⁶¹⁷¹⁸¹⁹,Arnold Christophe¹²³⁴⁵,Sallet Vincent¹²³⁴⁵,Dumont Yves¹²³⁴⁵,Perez-Tomas Amador¹⁵¹⁶¹⁷¹⁸¹⁹^ORCID

Affiliation:

1. Groupe d’Etude de la Matière Condensée (GEMaC)

2. Université de Versailles Saint Quentin en Y. – CNRS

3. Université Paris-Saclay

4. 78035 Versailles Cedex

5. France

6. Faculty of Exact and Natural Science

7. Department of Physics

8. Ivane Javakhishvili Tbilisi State University

9. 0179 Tbilisi

10. Georgia

11. Tyndall National Institute

12. University College Cork

13. T12 R5CP Cork

14. Ireland

15. Catalan Institute of Nanoscience and Nanotechnology (ICN2)

16. CSIC and BIST

17. Campus UAB

18. Bellaterra

19. Spain

Abstract

Strongly compensated Ga₂O₃ is shown to be an intrinsic (or native) p-type conductor with the largest bandgap for any reported p-type transparent semiconductor oxide which may shift the frontiers in fields such as power electronics and photonics.

Funder

Ministry of Higher Education, Egypt

Agencia Estatal de Investigación

European Regional Development Fund

Generalitat de Catalunya

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02910A

Reference71 articles.