Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity-Reference-Cited by-同舟云学术

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Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

Published:2014 Issue:60 Volume:4 Page:31729-31734
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Lv Shasha¹²³⁴,Li Zhengcao¹²³⁴,Su Shiming¹²³⁴,Lin Linhan⁵⁶⁷,Zhang Zhengjun¹²³⁴,Miao Wei¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Key Laboratory of Advanced Materials

3. Tsinghua University

4. Beijing 100084, People's Republic of China

5. Department of Electrical and Computer Engineering

6. University of Michigan

7. Dearborn 47001, USA

Abstract

The FE properties were influenced by dimensionality and surface geometry structures, and improved with the increase of proximity.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA04440A

Reference34 articles.

1. High efficiency electron field emission from protruded graphene oxide nanosheets supported on sharp silicon nanowires

2. Field emission of silicon nanowires

3. Fabrication of vertically aligned Si nanowires and their application in a gated field emission device

4. Field emission of silicon nanowires grown on carbon cloth

5. Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties

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