Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties-Reference-Cited by-同舟云学术

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Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties

Published:2017 Issue:15 Volume:5 Page:3788-3795
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Cheng Kai¹²³⁴⁵,Guo Yu¹²³⁴⁵,Han Nannan¹²³⁴⁵,Su Yan¹²³⁴⁵,Zhang Junfeng⁶⁷⁸⁵,Zhao Jijun¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Materials Modification by Laser

2. Ion and Electron Beams (Dalian University of Technology)

3. Ministry of Education

4. Dalian 116024

5. China

6. School of Physics and Information Engineering

7. Shanxi Normal University

8. Linfen 041000

Abstract

Band alignments of lateral heterostructures of group-IV monochalcogenides.

Funder

Natural Science Foundation of Shanxi Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00595D

Reference68 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Rise of silicene: A competitive 2D material

3. Spin-orbit–induced spin splittings in polar transition metal dichalcogenide monolayers

4. Heterostructures based on two-dimensional layered materials and their potential applications

5. 2D materials and van der Waals heterostructures

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