Oxygen vacancy and doping atom effect on electronic structure and optical properties of Cd2SnO4
Author:
Affiliation:
1. School of Materials Science and Engineering
2. Beihang University
3. Beijing 100191
4. China
5. Journal Publishing Center of Tsinghua University Press
Abstract
The electronic structure and optical properties of oxygen vacancy and La-doped Cd2SnO4 were calculated using the plane-wave-based pseudopotential method based on the density functional theory (DFT) within the generalized gradient approximation (GGA).
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA10641F
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