Tuning anisotropic electronic transport properties of phosphorene via substitutional doping-Reference-Cited by-同舟云学术

Tuning anisotropic electronic transport properties of phosphorene via substitutional doping

Published:2016 Issue:37 Volume:18 Page:25869-25878
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Guo Caixia¹²³⁴,Xia Congxin⁵²³⁴,Fang Lizhen⁵²³⁴,Wang Tianxing⁵²³⁴,Liu Yufang⁵²³⁴⁶

Affiliation:

1. College of Electronic and Electrical Engineering

2. Henan Normal University

3. Xinxiang

4. China

5. College of Physics and Materials Science

6. Infrared Optoelectronic Science and Technology Key Laboratory of Henan Province

Abstract

Using first-principles calculations, we studied the anisotropic electronic transport properties of pristine and X-doped phosphorene (X = B, Al, Ga, C, Si, Ge, N, As, O, S, and Se atoms).

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP04508A

Reference41 articles.

1. Graphene: Status and Prospects

2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

3. Single-layer MoS2 transistors

4. First principle defect study of MoSe2 field effect transistor

5. Structures and Chemical Properties of Silicene: Unlike Graphene

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer;Ferroelectrics Letters Section;2023-05-04

2. O-doping effects on the adsorption and detection of acetaldehyde and ethylene oxide on phosphorene monolayer: A DFT investigation;Chemical Physics Letters;2023-02

3. Spin dependent Goos–Hänchen-like effect in a strained phosphorene superlattice;Journal of Physics and Chemistry of Solids;2022-11

4. Electronic Band Gap Tuning and Calculations of Mechanical Strength and Deformation Potential by Applying Uniaxial Strain on MX₂ (M = Cr, Mo, W and X = S, Se) Monolayers and Nanoribbons;ACS Omega;2022-10-25

5. Enhanced DFT insights of doped phosphorene: Structural and electronic considerations;Computational and Theoretical Chemistry;2022-08