The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures-Reference-Cited by-同舟云学术

The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

Published:2020 Issue:19 Volume:10 Page:11219-11224
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang Wei¹²³⁴⁵,Jia Xiaoxiong¹²³⁴⁵,Wang Rui¹²³⁴⁵,Liu Huihui¹²³⁴⁵,Xiao Zhengyu¹²³⁴⁵,Quan Zhiyong¹²³⁴⁵^ORCID,Xu Xiaohong¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education

2. The School of Chemistry and Materials Science

3. Shanxi Normal University

4. Linfen 041004

5. China

Abstract

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA00459F

Reference46 articles.

1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

3. Electric-field-assisted switching in magnetic tunnel junctions